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| ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V(BR)CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m PD = 1.2W Complementary part number: ZXTN2018F typical VCE(sat) < -60 mV @ -1A Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features * * * * Higher power dissipation SOT23 package High peak current Low saturation voltage 100V forward blocking voltage Applications * * * * MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive High side switches Pinout - top view Ordering information Device ZXTP2027FTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000 Device marking 951 Issue 2 - September 2005 (c) Zetex Semiconductors plc 2005 1 www.zetex.com ZXTP2027F Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(b) Base current Power dissipation @ TA=25oC(a) Linear derating factor Power dissipation @ TA=25oC(b) Linear derating factor Power dissipation @ TA=25oC(c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit -100 -100 -60 -7 -10 -4 -1 1.0 8.0 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V A A A W mW/oC W mW/oC W mW/oC oC Thermal resistance Parameter Junction to ambient (a) Symbol RJA RJA RJA Value 125 104 80 Unit o o o C/W C/W C/W Junction to ambient (b) Junction to ambient (c) NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) As (b) above measured at t<5secs. Issue 2 - September 2005 (c) Zetex Semiconductors plc 2005 2 www.zetex.com ZXTP2027F Characteristics Issue 2 - September 2005 (c) Zetex Semiconductors plc 2005 3 www.zetex.com ZXTP2027F Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio Symbol V(BR)CBO V(BR)CEV V(BR)CEO V(BR)EBO ICEV ICBO IEBO HFE 100 100 80 20 Collector-emitter saturation voltage VCE(SAT) 250 200 145 40 -15 -45 -70 -155 Base-Emitter saturation voltage Base-Emitter turn-on voltage Transition frequency Output capacitance Turn-on time Turn-off time VBE(SAT) VBE(on) fT Cobo t(on) t(off) -0.89 -0.81 165 44 32 305 2%. Min. -100 -100 -60 -7.0 Typ. -120 -120 -75 -8.2 Max. Unit V V V V Conditions IC=-100A IC =-1A, 1V> VBE>-0.3V IC=-10mA (a) IE=-100A VCE=-80V, VBE = 1V VCB=-80V VEB=-6V IC=-10mA, VCE=-2V(a) IC=-2A, VCE=-2V(a) Ic=-4A, VCE=-2V(a) Ic=-10A, VCE=-2V(a) -20 -20 -10 nA nA nA 300 -25 -60 -95 -240 -1.0 -0.95 mV mV mV mV V V MHz pF ns ns IC=-100mA, IB=-10mA(a) IC=-1A, IB=-100mA(a) IC=-2A, IB=-200mA(a) IC=-4A, IB=-200mA(a) IC=-4A, IB=-200mA(a) IC=-4A, VCE=-2V(a) Ic=-100mA, VCE=-10V, f=50MHz VCB=-10V, f=1MHz VCC=-10V, IC=-2A, IB1=IB2=-200mA NOTES: (a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle Issue 2 - September 2005 (c) Zetex Semiconductors plc 2005 4 www.zetex.com ZXTP2027F Typical characteristics Issue 2 - September 2005 (c) Zetex Semiconductors plc 2005 5 www.zetex.com ZXTP2027F Packaging details - SOT23 L H N D 3 leads G M B A C K F Dim. A B C D F G Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15 Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059 Dim. H K L M N - Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 - Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 - 0.95 NOM 0.0375 NOM 1.90 NOM 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inche Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 - September 2005 (c) Zetex Semiconductors plc 2005 6 www.zetex.com |
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